MJ11022G دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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MJ11022G
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حجم فایل
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95.749
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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6
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Darlington Transistors
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Datasheet:
onsemi MJ11022G
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Transistor Type:
NPN
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Operating Temperature:
-65°C~+200°C@(Tj)
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Collector Current (Ic):
15A
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Power Dissipation (Pd):
175W
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Transition frequency (fT):
-
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DC current gain (hFE@Vce,Ic):
400@5V,10A
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Collector-emitter voltage (Vceo):
250V
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Collector cut-off current (Icbo@Vcb):
1mA
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Collector-emitter saturation voltage (VCE(sat)@Ic,Ib):
3.4V@15A,150mA
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Package:
TO-204
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Tray
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Part Status:
Active
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Current - Collector (Ic) (Max):
15A
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Voltage - Collector Emitter Breakdown (Max):
250V
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Vce Saturation (Max) @ Ib, Ic:
3.4V @ 150mA, 15A
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Current - Collector Cutoff (Max):
1mA
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DC Current Gain (hFE) (Min) @ Ic, Vce:
400 @ 10A, 5V
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Power - Max:
175W
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Frequency - Transition:
-
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Mounting Type:
Through Hole
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Package / Case:
TO-204AA, TO-3
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Supplier Device Package:
TO-204 (TO-3)
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Base Part Number:
MJ110
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detail:
Bipolar (BJT) Transistor NPN - Darlington 250V 15A 175W Through Hole TO-204 (TO-3)
